N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

文件：141.08 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

文件：122.44 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

文件：65.489 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

文件：122.44 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：IRF8313；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

文件：2.08671 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：IRF8313；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

文件：2.16288 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：IRF8313；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability ap

文件：2.08671 Mbytes 页数：6 Pages

UMW

友台半导体

Trans MOSFET N-CH 450V 4.5A

NJS

HEXFET Power MOSFET

Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

文件：260.41 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switc

文件：260.41 Kbytes 页数：10 Pages

IRF