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IRF840A

Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

HEXFET®PowerMOSFET VDSSRds(on)maxID 500V0.85Ω8.0A Applications lSwitchModePowerSupply(SMPS) lUninterruptablePowerSupply lHighspeedpowerswitching Benefits lLowGateChargeQgresultsinSimpleDriveRequirement lImprovedG

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF840A

Power MOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840A

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840A

Uninterruptable Power Supply

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand Avalanche

KERSEMI

Kersemi Electronic Co., Ltd.

IRF840A

Power MOSFET

VishayVishay Siliconix

威世科技

IRF840A

Power MOSFET

VishayVishay Siliconix

威世科技

IRF840AL

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840AL

Power MOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840AL

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技

IRF840AL

Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF840ALPBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840APBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840AS

Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)

Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching Benefits ●LowGateChargeQgResultsinSimple DriveRequirement ●ImprovedGate,AvalancheandDynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand AvalancheVo

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF840AS

Power MOSFET

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TEL

TRANSYS Electronics Limited

IRF840AS

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840AS

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技

IRF840AS_V01

Power MOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww

VishayVishay Siliconix

威世科技

IRF840ASPBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840ASTRL

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

IRF840ASTRLPBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

VishayVishay Siliconix

威世科技

详细参数

  • 型号:

    IRF840A

  • 功能描述:

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2020+
TO-220
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR
23+
TO220
10000
公司只做原装正品
询价
IR
22+
TO-220
4
只做原装进口 免费送样!!
询价
IR墨西哥
22+
TO-220
56
长源创新-只做原装---假一赔十
询价
FAIRCHILD/仙童
22++
TO-220
5209
原装正品!诚信经营,实单价优!
询价
IR
17+
TO-220AB
31518
原装正品 可含税交易
询价
IR
06+
TO-220
13000
全新原装 绝对有货
询价
IR
23+
TO-220
35890
询价
IR
05+
TO-220
34500
询价
IR
2017+
TO-220
25586
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
更多IRF840A供应商 更新时间2024-4-30 15:22:00