| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF840AS | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) 文件:919.08 Kbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF840AS | Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www 文件:234.01 Kbytes 页数:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF840AS | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High Speed Power Switching Benefits ● Low Gate Charge Qg Results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Vo 文件:129.41 Kbytes 页数:10 Pages | IRF | IRF | |
IRF840AS | Power MOSFET Power MOSFET VDSS =500V, RDS(on) = 0.85 ohm, ID = 8.0 A N Channel 文件:156.83 Kbytes 页数:2 Pages | TEL | TEL | |
IRF840AS | SMPS MOSFET HEXFET짰 Power MOSFET 文件:667.17 Kbytes 页数:10 Pages | IRF | IRF | |
IRF840AS | isc N-Channel MOSFET Transistor 文件:372.97 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche, and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www 文件:234.01 Kbytes 页数:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) 文件:919.08 Kbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) 文件:919.08 Kbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) 文件:919.08 Kbytes 页数:8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号:
IRF840AS
- 功能描述:
MOSFET N-Chan 500V 8.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
D2-PAK |
31518 |
原装正品 可含税交易 |
询价 | ||
IR |
2021+ |
TO-220 |
6800 |
原厂原装,欢迎咨询 |
询价 | ||
IR |
24+ |
TO 263 |
160888 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
24+ |
原厂封装 |
1663 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
IR |
23+ |
TO-263 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TO263 |
41200 |
原装正品,现货特价 |
询价 |
相关规格书
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相关库存
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