零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRF840L | Ease of Paralleling | VishayVishay Siliconix 威世科技 | Vishay | |
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Power MOSFET FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive | VishayVishay Siliconix 威世科技 | Vishay | ||
isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET | TEL TRANSYS Electronics Limited | TEL |
详细参数
- 型号:
IRF840L
- 功能描述:
MOSFET N-Chan 500V 8.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR/VISHAY |
TO-220 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
VishayIR |
07+/08+ |
TO-262 |
151 |
询价 | |||
IR |
2016+ |
TO-262 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
23+ |
TO-263 |
6000 |
专业优势供应 |
询价 | ||
IR |
23+ |
TO-262 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
VishaySiliconix |
2019+ |
TO-262-3LongLeads |
65500 |
I2Pak |
询价 | ||
23+ |
N/A |
85900 |
正品授权货源可靠 |
询价 | |||
IR |
2020+ |
TO-262 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
21+ |
TO-263 |
30000 |
只做正品原装现货 |
询价 | ||
IR/VISHAY |
22+ |
TO-220 |
20000 |
保证原装正品,假一陪十 |
询价 |
相关规格书
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相关库存
更多- IRF840LCPBF
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- IRF8734TRPBF
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