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IRF840L

Ease of Paralleling

VishayVishay Siliconix

威世科技

IRF840LC

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技

IRF840LCL

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCL

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCL

Power MOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技

IRF840LCL

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF840LCLPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesigniticantlylowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOStechnology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedriverequirementsandtotalsystemsavings.I

VishayVishay Siliconix

威世科技

IRF840LCS

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCS

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCS

Power MOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技

IRF840LCS

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A)

Description ThisnewseriesoflowchargeHEXFET®powerMOSFETsachievesignificantlowergatechargeoverconventionalMOSFETs.UtilizingthenewLCDMOS(lowchargedeviceMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducegatedriverequirem

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF840LCS_V01

Power MOSFET

FEATURES •Ultralowgatecharge •Reducedgatedriverequirement •Enhanced30VVGSrating •ReducedCiss,Coss,Crss •Extremelyhighfrequencyoperation •Repetitiveavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Th

VishayVishay Siliconix

威世科技

IRF840LCSPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCSTRR

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LCSTRRPBF

Power MOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargethenconventionalPowerMOSFETs.UtilizingthenewLCDMOS(lowchargedevicePowerMOSFETs)technology,thedeviceimprovementsareachievedwithoutaddedproductcost,allowingforreducedgatedrive

VishayVishay Siliconix

威世科技

IRF840LC

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF840LC

Power MOSFET

VishayVishay Siliconix

威世科技

IRF840LC_V01

Power MOSFET

VishayVishay Siliconix

威世科技

IRF840LCL

Power MOSFET

TEL

TRANSYS Electronics Limited

详细参数

  • 型号:

    IRF840L

  • 功能描述:

    MOSFET N-Chan 500V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR/VISHAY
TO-220
30216
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S
询价
VishayIR
07+/08+
TO-262
151
询价
IR
2016+
TO-262
6528
房间原装进口现货假一赔十
询价
IR
23+
TO-263
6000
专业优势供应
询价
IR
23+
TO-262
8650
受权代理!全新原装现货特价热卖!
询价
VishaySiliconix
2019+
TO-262-3LongLeads
65500
I2Pak
询价
23+
N/A
85900
正品授权货源可靠
询价
IR
2020+
TO-262
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
IR
21+
TO-263
30000
只做正品原装现货
询价
IR/VISHAY
22+
TO-220
20000
保证原装正品,假一陪十
询价
更多IRF840L供应商 更新时间2024-4-30 14:00:00