型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF840L | Ease of Paralleling 文件:176.79 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世科技 | Vishay | |
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I 文件:1.51385 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive 文件:1.028819 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET FEATURES • Ultra low gate charge • Reduced gate drive requirement • Enhanced 30 V VGS rating • Reduced Ciss, Coss, Crss • Extremely high frequency operation • Repetitive avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * Th 文件:231.4 Kbytes 页数:10 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive 文件:175.22 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Description This new series of low charge HEXFET®power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirem 文件:173.93 Kbytes 页数:10 Pages | IRF | IRF | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive 文件:1.028819 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve signiticantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. I 文件:1.51385 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive 文件:175.22 Kbytes 页数:9 Pages | VishayVishay Siliconix 威世科技 | Vishay | ||
Power MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive 文件:1.028819 Mbytes 页数:8 Pages | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号:
IRF840L
- 功能描述:
MOSFET N-Chan 500V 8.0 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR/VISHAY |
TO-220 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
VishayIR |
24+ |
TO-262 |
151 |
询价 | |||
IR |
23+ |
TO-262 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
VISHAY |
25+ |
TO-262 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
1923+ |
TO-262 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
IR/VISHAY |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay Siliconix |
23+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
06+07+ |
TO-262 |
2102 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR/VISHAY |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 |
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