isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID= 3.0A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.5Ω(Max) • Fast Switching Speed • Simple Drive Requirements APPLICATIONS • Desinged for high efficiency switch mode power supply.

文件：64.099 Kbytes 页数：2 Pages

ISC

无锡固电

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD

文件：225.25 Kbytes 页数：4 Pages

SUNTAC

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercial industrial through hole applications. ▼Ease of Paralleling ▼Fast Switching Char

文件：100.98 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：238.5 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipatio

文件：135.96 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

N-Channel 600V (D-S) Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High spee

文件：2.01616 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Available in Tape and Reel

DESCRIPTION The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because

文件：800.89 Kbytes 页数：8 Pages

KERSEMI

N-Channel MOSFET

■ Features ● VDS (V) = 500V ● ID = 4.5 A (VGS = 10V) ● RDS(ON)

文件：2.01524 Mbytes 页数：6 Pages

KEXIN

科信电子

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：238.5 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)

Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • Available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Avalanche

文件：175.73 Kbytes 页数：6 Pages

IRF