N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercial industrial through hole applications. ▼Ease of Paralleling ▼Fast Switching Char

文件：100.98 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Fast Switching Characteristic

文件：100.98 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAPEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost.\nThe TO-220CFM isolation package is widely preferred for commercial industrial through hole applications.▼Ease of Paralleling\n▼Fast Switching Characteristic\n▼S

APEC

富鼎先进电子

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：238.5 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：238.5 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世

HEXFET Power MOSFET

文件：876.43 Kbytes 页数：7 Pages

IRF