Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：242.75 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness • Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：242.75 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：159.55 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：159.55 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：159.55 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

N-Channel 6 50V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：2.23303 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：1.61271 Mbytes 页数：9 Pages

KERSEMI

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：888.87 Kbytes 页数：10 Pages

Fairchild

仙童半导体

Reduced capacitive switching losses

FEATURES • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Simple gate drive circuitry

文件：296.71 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET

DESCRIPTION ➤ IRF830 is 500V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ➤ Advanced termination scheme to provide enhanced voltageblocking capability; ➤ Avalanche Energy Specified; ➤ Source-to-Drain Diode Recove

文件：384.32 Kbytes 页数：7 Pages

FS