IRF830ASTRLPBF

Power MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

IRF830ASTRLPBF

N-Channel 6 50V (D-S) Power MOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection

IRF830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

IRF830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

IRF830B

Reduced capacitive switching losses

FEATURES •Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) •Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

IRF830F

4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET

DESCRIPTION ➤IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecove

IRF830FI

isc N-Channel MOSFET Transistor

DESCRIPTION •DrainCurrent–ID=3.0A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) •FastSwitchingSpeed •SimpleDriveRequirements APPLICATIONS •Desingedforhighefficiencyswitchmodepowersupply.

IRF830FP

POWER MOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

IRF830I-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220CFMisolationpackageiswidelypreferredforcommercialindustrialthroughholeapplications. ▼EaseofParalleling ▼FastSwitchingChar

IRF830L

Power MOSFET

FEATURES •Surfacemount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee