4.4A, 500V, 1.5廓 N-CHANNEL POWER MOSFET

DESCRIPTION ➤ IRF830 is 500V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ➤ Advanced termination scheme to provide enhanced voltageblocking capability; ➤ Avalanche Energy Specified; ➤ Source-to-Drain Diode Recove

文件：384.32 Kbytes 页数：7 Pages

FS

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

文件：122.44 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

High Power Factor/Low THD

文件：355.59 Kbytes 页数：16 Pages

IRF

POWER MOSFET

文件：40.43 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

Vishay

威世科技

MOSFET

Silikron

新硅能微电子

500V N-Channel Power MOSFET

MINOS

迈诺斯

DirectFET

Power MOSFET

Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with e

文件：344.2 Kbytes 页数：10 Pages

IRF

DirectFET

Power MOSFET

Description The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET package is compatible with e

文件：344.2 Kbytes 页数：10 Pages

IRF