HEXFET
Power MOSFET plus Schottky Diode

Description The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout

文件：274.13 Kbytes 页数：9 Pages

IRF

Dual Sided Cooling Compatible

文件：274.13 Kbytes 页数：9 Pages

IRF

Dual Sided Cooling Compatible

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IRF

Unique Modulation Scheme Reduces EMI Emissions

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POWER

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2.8VIN to 40VIN Isolated 關Module DC/DC Converter

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