N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.55 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS

文件：184.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEXFET Power MOSFET

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power

文件：884.29 Kbytes 页数：7 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.59241 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

文件：45.07 Kbytes 页数：2 Pages

ISC

无锡固电

Vishay Siliconix

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：141.7 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Simple drive requirements • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：217.5 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4

文件：198.69 Kbytes 页数：6 Pages

IRF

Power MOSFET

Power MOSFET VDSS =200V, RDS(on) = 0.80 ohm, ID = 5.2 A

文件：148.75 Kbytes 页数：1 Pages

TEL

Vishay Siliconix

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provi

文件：141.7 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET

Power MOSFET

文件：252.69 Kbytes 页数：9 Pages

IRF