isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls,relay and solenoid drivers and other pulse. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Requirements

文件：45.07 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die size up to HEX-4

文件：198.69 Kbytes 页数：6 Pages

IRF

Power MOSFET

Power MOSFET VDSS =200V, RDS(on) = 0.80 ohm, ID = 5.2 A

文件：148.75 Kbytes 页数：1 Pages

TEL

东电电子

Power MOSFET

文件：141.7 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技