HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

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IRF

Advanced Process Technology

文件：193.79 Kbytes 页数：11 Pages

IRF

HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29廓 , ID=-13A )

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文件：997.19 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：193.79 Kbytes 页数：11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件：998.15 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：193.79 Kbytes 页数：11 Pages

IRF

-150V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

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