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IRF610

N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:148.52 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

IRF610

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件:594.16 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF610

3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

文件:55.29 Kbytes 页数:7 Pages

INTERSIL

IRF610

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoH

文件:158.97 Kbytes 页数:8 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF610

isc N-Channel MOSFET Transistor

• DESCRITION • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive

文件:45.17 Kbytes 页数:2 Pages

ISC

无锡固电

IRF610

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:113.15 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF610

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:113.15 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF610

N-Channel Power Mosfets

文件:344.15 Kbytes 页数:5 Pages

ARTSCHIP

IRF610

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF610

Power MOSFET

文件:282.85 Kbytes 页数:9 Pages

VISHAYVishay Siliconix

威世威世科技公司

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    3000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    200V

  • Maximum Continuous Drain Current:

    3.3A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
IR
19+
TO-220
20999
询价
INFINEON/英飞凌
25+
TO-220
45000
IR全新现货IRF610即刻询购立享优惠#长期有排单订
询价
IR
24+
TO-220
2000
全新原装深圳仓库现货有单必成
询价
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON/英飞凌
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
询价
INFINEON/英飞凌
96+
TO-220
10
原装进口无铅现货
询价
IR
800
正品原装--自家现货-实单可谈
询价
IR
06+
TO-220
8000
原装
询价
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
IR
24+
原厂封装
956
原装现货假一罚十
询价
更多IRF610供应商 更新时间2026-4-17 16:03:00