HEXFET짰 Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Aval

文件：1.7542 Mbytes 页数：9 Pages

IRF

Power MOSFET

文件：217.97 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET® Power MOSFET

Infineon

英飞凌

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：666.45 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.4A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件：170.86 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：1.38544 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司