HEXFET짰 Power MOSFET

DESCRIPTION Third Generation Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Surface Mount • available in Tape & Reel • Dynamic dV/dt Rating • Repetitive Aval

文件：1.7542 Mbytes 页数：9 Pages

IRF

Power MOSFET

文件：217.97 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET® Power MOSFET

Infineon

英飞凌

Silicon Rectifier Fast Recovery, Dual, Center Tap

Description: The NTE623 and NTE624 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: Low Forward Voltage High Current C

文件：18.34 Kbytes 页数：2 Pages

NTE

High performance low power FM IF system with high-speed RSSI

DESCRIPTION The SA624 is pin-to-pin compatible with the SA604A, but has faster RSSI rise and fall time. The SA624 is an improved monolithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indica

文件：161.9 Kbytes 页数：15 Pages

PHI

PHI

High performance low power FM IF system with high-speed RSSI

DESCRIPTION The SA624 is pin-to-pin compatible with the SA604A, but has faster RSSI rise and fall time. The SA624 is an improved monolithic low-power FM IF system incorporating two limiting intermediate frequency amplifiers, quadrature detector, muting, logarithmic received signal strength indica

文件：161.9 Kbytes 页数：15 Pages

PHI

PHI