Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

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Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

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