首页 >IRF350>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF350

N-Channel Power MOSFETs, 15A, 350V/400V

文件:117.33 Kbytes 页数:4 Pages

FAIRCHILD

仙童半导体

IRF350

N-CHANNEL POWER MOSFETS

FEATURES ● Low RDS(on) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Low input capacitance ● Extended safe operating area ● Improved high temperature reliability ● TO-3 package (Standard)

文件:212.49 Kbytes 页数:5 Pages

SAMSUNG

三星

IRF350

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They

文件:59.63 Kbytes 页数:7 Pages

INTERSIL

IRF350

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

文件:144.83 Kbytes 页数:7 Pages

IRF

IRF350

isc N-Channel MOSFET Transistor

文件:49.05 Kbytes 页数:2 Pages

ISC

无锡固电

IRF350

N-CHANNEL POWER MOSFETS

文件:91.64 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF350

N-CHANNEL POWER MOSFET

文件:43.18 Kbytes 页数:2 Pages

SEME-LAB

IRF350

15A, 400V, 0.300 Ohm, N-Channel Power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.\nThey c • 15A, 400V\n•rDS(ON)= 0.300Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n- TB334 “Guidelines for Soldering Surface Mount\nComponents to PC Boards”;

Renesas

瑞萨

IRF350

MOSFETs and JFETs

TT Electronics

IRF350

场效应管(MOSFET)

NTE

技术参数

  • 漏源电压(Vdss):

    400V

  • 连续漏极电流(Id):

    14A

  • 功率(Pd):

    150W

  • 阈值电压(Vgs(th)@Id):

    4V@250uA

  • 栅极电荷(Qg@Vgs):

    110nC@10V

  • 输入电容(Ciss@Vds):

    2.6nF@25V

  • 工作温度:

    -55℃~+150℃@(Tj)

供应商型号品牌批号封装库存备注价格
IR
2021+
TO-3
16800
全新原装正品,自家优势现货
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
24+
TO-204
8500
只做原装正品假一赔十为客户做到零风险!!
询价
IR
24+
TO-3
10000
询价
IR
98+
TO-204
2500
全新原装绝对自己公司现货特价!
询价
IOR
25+
PLCC
18000
原厂直接发货进口原装
询价
IOR
25+
TO3
1500
强调现货,随时查询!
询价
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
询价
IR/MOT
24+
TO-3
1200
原装现货假一罚十
询价
IR
23+
TO-204
5000
原装正品,假一罚十
询价
更多IRF350供应商 更新时间2026-1-21 16:14:00