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IRFS230

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU230A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10A(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) W m

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFU230A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFU230B

200VN-ChannelMOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulsein

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFY230

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY230C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRK.230

SCR/SCRandSCR/DIODE

IRF

International Rectifier

IRLF230

HEXFETTRANSISTOR

IRF

International Rectifier

IRLR/U230A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=7.5A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRLR230A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=7.5A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRLR230A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRLRU230A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRLU230A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=7.5A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRLU230A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISCD230

iscEpitaxialSiliconAvalanchephotodiode

DESCRIPTION •Highgainatlowbiasvoltage •Lowcose •APDwith0.04mm2activearea •230umdiameteractivearea •Lowcapacitance •Optimumgain:50-60 •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Laserrangefinder •Highspee

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISCPK230W

UltrafastRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

J230

PLASTIC-CASEJUNCTIONFIELD-EFFECTTRANSISTORS

N-ChannelJFETs

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

J230

N-ChannelSiliconJunctionField-EffectTransistor

N-ChannelSiliconJunctionField-EffectTransistor •AudioAmplifiers

InterFET

InterFET Corporation

KSP230

P-ChannelEnhancementModeVerticalD-MOSTransistor

■Features ●VDS(V)=-300V ●ID=-0.21A(VGS=-10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KT230

SiliconSpreadingResistanceTemperatureSensorinSurfaceMountTechnology

Features •TemperaturedependentResistorwithPositiveTemperatureCoefficient •SMDplasticpackageforverysmallthermaltimeconstants •Fastresponse •Highreliabilityduetomultilayergoldcontacts •n-conductingsiliconcrystal •Polarityindependentduetosymmetricalconstruction

SIEMENSSiemens Ltd

西门子德国西门子股份公司

供应商型号品牌批号封装库存备注价格
IR
22+
16+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
16+
8000
只做原装现货
询价
IR
23+
16+
7000
询价
ISC/固电
23+
TO-3PF
29888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+
TO-263
35890
询价
IR
1415+
TO-263
28500
全新原装正品,优势热卖
询价
IR
2016+
TO-263
6528
房间原装进口现货假一赔十
询价
IR
16+
TO-220
10000
全新原装现货
询价
IR
16+
原厂封装
798
原装现货假一罚十
询价
IR
23+
D2-Pak
8600
全新原装现货
询价
更多IRFS230供应商 更新时间2024-9-24 14:00:00