TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.27ohm, Id=21)

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance; superior reverse energy and dio

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 21A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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isc N-Channel MOSFET Transistor

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