| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF520N | Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：116.9 Kbytes 页数：8 Pages | IRF | IRF | |
IRF520N | isc N-Channel MOSFET Transistor 文件：294.54 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in 文件：1.09122 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：405.26 Kbytes 页数：10 Pages | IRF | IRF | ||
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：185.16 Kbytes 页数：10 Pages | IRF | IRF | ||
Low-profile through-hole (IRF520NL) Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in 文件：1.09122 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
Advamced {rpcess Technology Surface Mount Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：405.26 Kbytes 页数：10 Pages | IRF | IRF | ||
N-Channel MOSFET Transistor 文件：338.56 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Isc N-Channel MOSFET Transistor 文件：300.27 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
Advanced Process Technology 文件：195.99 Kbytes 页数：11 Pages | IRF | IRF |
技术参数
- OPN：
IRF520NPBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
100 V
- RDS (on) @10V max：
200 mΩ
- ID @25°C max：
9.7 A
- QG typ @10V：
16.7 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
20300 |
INFINEON/英飞凌原装特价IRF520N即刻询购立享优惠#长期有货 |
询价 | ||
IOR |
24+ |
TO220 |
9518 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INFINEON/英飞凌 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
询价 | ||
IR |
2015+ |
TO-220AB |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
24+ |
原厂封装 |
5450 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
T0-220 |
8866 |
询价 | |||
IR |
25+ |
TO220 |
20 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
25+23+ |
TO-220 |
25650 |
绝对原装正品全新进口深圳现货 |
询价 |
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