isc N-Channel MOSFET Transistor

• DESCRITION • High Current ,High Speed Switching • DC-DC&DC-AC Converters • Motor Control ,Audio Amplifiers • FEATURES • Typical RDS(on) =0.23Ω • Avalanche Rugged Technology • High Current Capability • Low Gate Charge • 175℃ Operating Temperature

文件：55.23 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS ■ TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE APPLICATIONS ■ HIGH CURRENT, HIGH SPE

文件：181.76 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：185.16 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.9 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：294.54 Kbytes 页数：2 Pages

ISC

无锡固电