HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

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IRF

Advanced Process Technology

文件：316.18 Kbytes 页数：10 Pages

IRF

Transimpedance amplifier 280MHz

DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. FEATURES • Low noise: 3.5pA/√Hz

文件：175.96 Kbytes 页数：14 Pages

PHI

PHI

PROGRAMMABLE SYNCHRONOUS-BUCK REGULATOR CONTROLLER

文件：417.02 Kbytes 页数：29 Pages

TI

德州仪器

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing

文件：234.99 Kbytes 页数：17 Pages

PANASONIC

松下