Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω (Typ.)

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

分立式 MOSFET

ONSEMI

安森美半导体

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s

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STMICROELECTRONICS

意法半导体

N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

文件：187.75 Kbytes 页数：3 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：64.319 Kbytes 页数：2 Pages

ISC

无锡固电