Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：125.28 Kbytes 页数：8 Pages

IRF

P-Channel MOSFET Transistor

文件：334.13 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：738.7 Kbytes 页数：8 Pages

KERSEMI

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• P 通道MOSFET;

Infineon

英飞凌

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：186.9 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

文件：696.34 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：125.28 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：186.9 Kbytes 页数：10 Pages

IRF

P-Ch 100V Fast Switching MOSFETs

100 EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology

文件：998.16 Kbytes 页数：4 Pages

EVVOSEMI

翊欧

HEXFET Power MOSFET

Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. ● Advanced Proces

文件：696.34 Kbytes 页数：10 Pages

IRF