IRF530

N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR

IRF530

N-CHANNEL ENHANCEMENT-MODE SILICON GATE

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET14AMPERES100VOLTSRDS(on)=0.140Ω

IRF530

N-CHANNEL POWER MOSFETS

IRF530

N-Channel Power MOSFETs, 20 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

IRF530

N-Channel Power MOSFETs Avalanche Energy Rated

IRF530

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS N-channelenhancementmodePOWERMOSfieldeffecttransistors.EasydriveandveryfastswitchingtimesmakethesePOWERMOStransistorsidealforhighspeedswitchingapplications.ApplicationsincludeDC/DCconverters,UPSbatterychargers,s

IRF530

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

IRF530

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

IRF530

N?묬hannel Enhancement?묺ode Silicon Gate

TMOSE−FET.™PowerFieldEffectTransistor N−ChannelEnhancement−ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain−to−sourcediodewithafastrecoverytime.Designedfo

IRF530

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfor