| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF530S | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件：177.08 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF530S | Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas 文件：218.01 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
IRF530S | Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi 文件：180.1 Kbytes 页数：6 Pages | IRF | IRF | |
IRF530S | HEXFET Power MOSFET 文件：171.61 Kbytes 页数：8 Pages | IRF | IRF | |
IRF530S | 丝印：D2PAK；Package：TO-263；N-Channel 100-V (D-S) MOSFET 文件：1.00811 Mbytes 页数：8 Pages | VBSEMI 微碧半导体 | VBSEMI | |
IRF530S | Halogen-free According to IEC 61249-2-21 文件：916.94 Kbytes 页数：8 Pages | KERSEMI | KERSEMI | |
Power MOSFET FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas 文件：218.01 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件：177.08 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件：177.08 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in 文件：177.08 Kbytes 页数：9 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
详细参数
- 型号：
IRF530S
- 功能描述：
MOSFET N-Chan 100V 14 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
询价 | ||
IR |
06+ |
TO-263 |
10000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
24+/25+ |
177 |
原装正品现货库存价优 |
询价 | |||
IR |
24+ |
D2-Pak |
8866 |
询价 | |||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
24+ |
NA |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
I |
24+ |
T0-263 |
5000 |
全现原装公司现货 |
询价 | ||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR/VISHAY |
20+ |
TO-263 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 |
相关规格书
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相关库存
更多- IRF530STRLPBF
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- IRF624SPBF
- IRF630NLPBF
- IRF630NSPBF
- IRF630NSTRRPBF
- IRF630R
- IRF630STRLPBF
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- IRF640LPBF
- IRF640NPBF
- IRF640NSTRLPBF
- IRF640NSTRRPBF
- IRF640PBF
- IRF640STRLPBF
- IRF644
- IRF644SPBF
