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IRF530S

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in

文件:177.08 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF530S

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

文件:218.01 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF530S

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:180.1 Kbytes 页数:6 Pages

IRF

IRF530S

HEXFET Power MOSFET

文件:171.61 Kbytes 页数:8 Pages

IRF

IRF530S

丝印:D2PAK;Package:TO-263;N-Channel 100-V (D-S) MOSFET

文件:1.00811 Mbytes 页数:8 Pages

VBSEMI

微碧半导体

IRF530S

Halogen-free According to IEC 61249-2-21

文件:916.94 Kbytes 页数:8 Pages

KERSEMI

IRF530S_V01

Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dv/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datas

文件:218.01 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF530SPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in

文件:177.08 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF530STRLPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in

文件:177.08 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

IRF530STRRPBF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in

文件:177.08 Kbytes 页数:9 Pages

VishayVishay Siliconix

威世威世科技公司

详细参数

  • 型号:

    IRF530S

  • 功能描述:

    MOSFET N-Chan 100V 14 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
22+
D2-PAK
9450
原装正品,实单请联系
询价
IR
06+
TO-263
10000
自己公司全新库存绝对有货
询价
IR
24+/25+
177
原装正品现货库存价优
询价
IR
24+
D2-Pak
8866
询价
IR
24+
原厂封装
2000
原装现货假一罚十
询价
IR
24+
NA
6980
原装现货,可开13%税票
询价
IR
2015+
D2-Pak
12500
全新原装,现货库存长期供应
询价
I
24+
T0-263
5000
全现原装公司现货
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR/VISHAY
20+
TO-263
36900
原装优势主营型号-可开原型号增税票
询价
更多IRF530S供应商 更新时间2025-11-28 17:40:00