首页 >IRF540NSTRLPBF/BKN>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel100-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-channelTrenchMOStransistor VDSS=100V ID=23A RDS(ON)≤77mΩ GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.t | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel100-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
TO-263 |
9990 |
原装正品，支持实单 |
询价 | ||
INFINEON |
22+ |
TO-263 |
8000 |
终端可免费供样,支持BOM配单 |
询价 | ||
INFINEON |
23+ |
TO-263 |
8000 |
只做原装现货 |
询价 | ||
INFINEON |
23+ |
TO-263 |
7000 |
询价 | |||
INFINEON/英飞凌 |
2223+ |
TO-263 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
IR |
23+ |
TO263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INFINEON/英飞凌 |
2023+ |
TO-263 |
5000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-263 |
5000 |
原装现货假一赔十 |
询价 | ||
IR |
21+ |
TO-263 |
8000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-263 |
800 |
只做原装正品 |
询价 |
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