| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRF530N | N-channel TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4. | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  | |
IRF530N | Power MOSFET(Vdss=100V, Rds(on)=90mohm, Id=17A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRF530N | 22A, 100V, 0.064 Ohm, N-Channel Power MOSFET Features •UltraLowOn-Resistance -rDS(ON)=0.064Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | |
IRF530N | N-Channel MOSFET Transistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.09Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Ultra Low On-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. |  | ||
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
HEXFET짰 Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
N-Channel 100-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | ||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Ultra Low On-Resistance Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-Channel 100-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •LowThermalResistancePackage •100RgTested APPLICATIONS •IsolatedDC/DCConverters | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | ||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
详细参数
- 型号：
IRF530N
- 制造商：
International Rectifier
- 功能描述：
MOSFET N TO-220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
15050 |
原装正品现货热卖 |
询价 | ||
23+ |
NA |
12328 |
原装正品价格优惠,长期优势供应 |
询价 | |||
20+ |
TO-220 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
询价 | |||
IR |
16+ |
TO220 |
8 |
原装进口现货,假一罚十 |
询价 | ||
IR |
23+ |
TO-220 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
询价 | ||
IR |
22+ |
TO-220 |
9150 |
绝对原装现货,价格低,欢迎询购! |
询价 | ||
IR(国际整流器) |
2023+ |
N/A |
4550 |
全新原装正品 |
询价 | ||
IR |
04+ |
4545 |
原装正品现货供应 |
询价 | |||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
23+ |
TO220 |
5500 |
现货,全新原装 |
询价 |
相关规格书
更多- IRF530NPBF
- IRF530NSTRLPBF
- IRF530PBF
- IRF530STRLPBF
- IRF540
- IRF540NPBF
- IRF540NSTRLPBF
- IRF540NSTRLPBF-CUTTAPE
- IRF540NSTRRPBF-CUTTAPE
- IRF540SPBF
- IRF540STRRPBF
- IRF540ZPBF
- IRF540ZSTRLPBF
- IRF5800TR
- IRF5802TRPBF
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- IRF5804TRPBF
- IRF5806TRPBF
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- IRF610PBF
- IRF610STRLPBF
- IRF620
- IRF6201TRPBF
- IRF620SPBF
- IRF6215LPBF
- IRF6215SPBF
- IRF6215STRRPBF
- IRF6216TRPBF
- IRF6217TRPBF
- IRF6218SHR
- IRF6218STRLPBF-CUTTAPE
- IRF624SPBF
- IRF630NLPBF
- IRF630NSPBF
- IRF630NSTRRPBF
- IRF630R
- IRF630STRLPBF
- IRF634SPBF
- IRF640LPBF
- IRF640NPBF
- IRF640NSTRLPBF
- IRF640NSTRRPBF
- IRF640PBF
相关库存
更多- IRF530NSPBF
- IRF530NSTRRPBF
- IRF530SPBF
- IRF530STRRPBF
- IRF540NLPBF
- IRF540NSPBF
- IRF540NSTRLPBF/BKN
- IRF540NSTRRPBF
- IRF540PBF
- IRF540STRLPBF
- IRF540ZLPBF
- IRF540ZSPBF
- IRF542
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- IRF5803TRPBF
- IRF5805TRPBF
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- IRF610LPBF
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- IRF614SPBF
- IRF6201PBF
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- IRF6215PBF
- IRF6215STRLPBF
- IRF6216PBF
- IRF6216TRPBF-CUTTAPE
- IRF6218PBF
- IRF6218STRLPBF
- IRF624PBF
- IRF630
- IRF630NPBF
- IRF630NSTRLPBF
- IRF630PBF
- IRF630SPBF
- IRF634PBF
- IRF640
- IRF640NLPBF
- IRF640NSPBF
- IRF640NSTRLPBF-CUTTAPE
- IRF640NSTRRPBF-CUTTAPE
- IRF640SPBF
