Advanced Process Technology

文件：284.9 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：189.55 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

文件：189.55 Kbytes 页数：9 Pages

IRF

Advanced Process Technology

文件：284.9 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：284.9 Kbytes 页数：11 Pages

IRF

22A, 100V, 0.064 Ohm, N-Channel Power MOSFET

• Ultra Low On-Resistance\n   - rDS(ON) = 0.064Ω, VGS = 10V\n• Simulation Models\n   - Temperature Compensated PSPICE™ and SABER© Electrical Models\n   - Spice and SABER© Thermal Impedance Models\n   - www.intersil.com\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve;

Renesas

瑞萨

N-channel TrenchMOS transistor

GENERAL DESCRIPTION\nN-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package.1. ’Trench’technology\n2. Low on-state resistance\n3. Fast switching\n4. Low thermal resistance

恩XP

22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET

• Ultra Low On-Resistance\n-rDS(ON)= 0.064Ω, VGS = 10V\n• Simulation Models\n- Temperature Compensated PSPICE™ and SABER©Electrical Models\n- Spice and SABER©Thermal Impedance Models\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve;

ONSEMI

安森美半导体