IRF530NLPBF规格书行情报价英飞凌IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF530NLPBF	文件：275.75 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：275.75 Kbytes 页数：10 Pages	IRF	IRF
IRF530NLPBF	文件：876.19 Kbytes Page：4 Pages	Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件：876.19 Kbytes 页数：4 Pages	IRF	IRF
IRF530NLPBF	文件：284.9 Kbytes Page：11 Pages	Advanced Process Technology 文件：284.9 Kbytes 页数：11 Pages	IRF	IRF
IRF530NLPBF	文件：300 bytes Page：1 Pages	HEXFET® Power MOSFET Description\nAdvanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pro	Infineon 英飞凌	Infineon

更多IRF530NLPBF供应商更新时间2025-10-6 16:30:00