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VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：310.12 Kbytes 页数：12 Pages

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VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：349.55 Kbytes 页数：12 Pages

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文件：384.04 Kbytes 页数：12 Pages

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StrongIRFET™ 功率 MOSFET 系列针对低 RDS(on) 和高电流能力进行了优化。 这些器件非常适合要求高性能和耐用性的低频应用。丰富的产品组合适合广泛的应用，包括直流电机、电池管理系统、逆变器和 DC-DC 变换器。 • 针对分销合作伙伴的广泛可用性进行了优化\n• 行业标准通孔电源封装\n• 高额定电流;

Infineon

英飞凌