型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
IRF531 | N-Channel Power MOSFETs, 20 A, 60-100 V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power, supplies, UPS, AC and DC motor control, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ● 文件:180.59 Kbytes 页数:6 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
IRF531 | N-CHANNEL POWER MOSFETS
文件:354.18 Kbytes 页数:6 Pages | Samsung 三星 | Samsung | |
IRF531 | N-Channel Power MOSFETs Avalanche Energy Rated
文件:390.01 Kbytes 页数:5 Pages | HARRIS | HARRIS | |
IRF531 | N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
文件:157.16 Kbytes 页数:2 Pages | Motorola 摩托罗拉 | Motorola | |
IRF531 | isc N-Channel Mosfet Transistor • DESCRITION • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. • FEATURES • Low RDS(on) • VGS Rated at ±20V • Silicon Gate for Fast Switching Speed • Rugged • Low Drive Require 文件:45.29 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF531 | N-Channel Enhancement-Mode Vertical DMOS Power FETs?
文件:70.69 Kbytes 页数:2 Pages | SUTEX | SUTEX | |
IRF531 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS battery chargers, s 文件:47.74 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF531 | N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS 文件:187.75 Kbytes 页数:3 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | |
IRF531 | SEMICONDUCTORS 文件:2.43533 Mbytes 页数:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | |
IRF531 | N-Channel enhancement-mode Vertical DMOS Power FETs | Microchip 微芯科技 | Microchip |
技术参数
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
79000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±20V
- Maximum Drain Source Voltage:
80V
- Maximum Continuous Drain Current:
14A
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
HARRIS |
17+ |
TO-220 |
6200 |
询价 | |||
SMG |
05+ |
原厂原装 |
10151 |
只做全新原装真实现货供应 |
询价 | ||
GE |
新 |
21 |
全新原装 货期两周 |
询价 | |||
HARRIS |
23+ |
TO-220 |
10000 |
专做原装正品,假一罚百! |
询价 | ||
HAR |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IR |
1923+ |
TO-220 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
SEC/上优 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VB |
21+ |
TO220AB |
10000 |
原装现货假一罚十 |
询价 | ||
F |
22+ |
TO220AB |
6000 |
十年配单,只做原装 |
询价 |
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