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IRF530NLPBF中文资料IRF数据手册PDF规格书
IRF530NLPBF规格书详情
描述 Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRF530NLPBF
- 制造商：
International Rectifier
- 功能描述：
MOSFET, 100V, 17A, 90 MOHM, 24.7 NC QG, TO-262
- 功能描述：
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262
- 功能描述：
TRANS MOSFET N-CH 100V 17A 3PIN TO-262 - Rail/Tube
- 功能描述：
MOSFET N-CH 100V 17A TO-262
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
12000 |
全新原装假一赔十 |
询价 | ||
IR |
24+ |
TO-262-3 |
1790 |
询价 | |||
IR |
TO-220 |
3200 |
原装长期供货! |
询价 | |||
IR |
25+ |
QFN |
18000 |
原厂直接发货进口原装 |
询价 | ||
IR |
22+ |
TO-220 |
11955 |
进口原装 |
询价 | ||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
1728+ |
TO-220AB |
8500 |
只做原装进口,假一罚十 |
询价 | ||
IR |
三年内 |
1983 |
只做原装正品 |
询价 |
