Advanced Process Technology

文件：284.98 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：284.98 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

Description Third Generation HEXFETs International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissi

文件：2.15994 Mbytes 页数：7 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.90441 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation

文件：6.94774 Mbytes 页数：7 Pages

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