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IRF530NLPBF数据手册Infineon中文资料规格书
IRF530NLPBF规格书详情
描述 Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
技术参数
- 型号：
IRF530NLPBF
- 制造商：
International Rectifier
- 功能描述：
MOSFET, 100V, 17A, 90 MOHM, 24.7 NC QG, TO-262
- 功能描述：
Trans MOSFET N-CH 100V 17A 3-Pin(3+Tab) TO-262
- 功能描述：
TRANS MOSFET N-CH 100V 17A 3PIN TO-262 - Rail/Tube
- 功能描述：
MOSFET N-CH 100V 17A TO-262
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+/25+ |
1250 |
原装正品现货库存价优 |
询价 | |||
IR |
2016+ |
TO220 |
6523 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
23+ |
原厂原封□□□ |
339 |
原厂授权代理分销现货只做原装正迈科技样品支持现货 |
询价 | ||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
24+ |
TO220 |
5000 |
原装进口现货假一赔十 |
询价 | ||
IOR |
2007 |
TO220 |
64 |
原装现货海量库存欢迎咨询 |
询价 | ||
IR |
23+ |
TO-220 |
18689 |
询价 | |||
IR |
24+ |
TO-262-3 |
1790 |
询价 | |||
IR |
2020+ |
TO220 |
12500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
24+ |
TO-220AB |
45000 |
绝对全新原装公司长期有货 |
询价 |
