AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：310.12 Kbytes 页数：12 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.0265Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera

文件：338.75 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Process Technology

文件：308.2 Kbytes 页数：13 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：310.12 Kbytes 页数：12 Pages

IRF

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：301.17 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：349.55 Kbytes 页数：12 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：349.55 Kbytes 页数：12 Pages

IRF

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

文件：1.63385 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.48 Kbytes 页数：2 Pages

ISC

无锡固电

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

文件：310.12 Kbytes 页数：12 Pages

IRF