HEXFET Power MOSFET

文件：112.91 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=-30V, Rds(on)=0.085ohm)

Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. ● Ultra

文件：98.42 Kbytes 页数：8 Pages

IRF

High performance trench technology for extermly low Rdson

文件：1.86653 Mbytes 页数：7 Pages

KERSEMI

Dual Micropower, 1.4V/關s Precision Rail-to-Rail Output Amplifier

文件：770.75 Kbytes 页数：22 Pages

LINER

凌力尔特