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IRF5852

Power MOSFET(Vdss=20V)

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

文件:239.7 Kbytes 页数:9 Pages

IRF

IRF5852

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

文件:130.009 Kbytes 页数:10 Pages

IRF

IRF5852

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

文件:132.21 Kbytes 页数:9 Pages

IRF

IRF5852

Power MOSFET(Vdss=20V)

Infineon

英飞凌

IRF5852PBF

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

文件:206.02 Kbytes 页数:9 Pages

IRF

IRF5852TR

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

文件:132.21 Kbytes 页数:9 Pages

IRF

IRF5852TRPBF

Ultra Low On-Resistance

Description These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dua

文件:130.009 Kbytes 页数:10 Pages

IRF

详细参数

  • 型号:

    IRF5852

  • 制造商:

    IRF

  • 制造商全称:

    International Rectifier

  • 功能描述:

    Power MOSFET(Vdss=20V)

供应商型号品牌批号封装库存备注价格
IR(国际整流器)
24+
N/A
12048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
INFINEON
25+
TSOP-6
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR/
24+
原厂原装
10015
ELE优势库存国外货源
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IRF
21+
SOT-23
10000
原装现货假一罚十
询价
Infineon Technologies
22+
6TSOP
9000
原厂渠道,现货配单
询价
IR
23+
393000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
询价
Infineon Technologies
2022+
6-TSOP
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
23+
TSOP-6
59435
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
更多IRF5852供应商 更新时间2025-11-30 17:00:00