IRF5852TR中文资料PDF规格书
IRF5852TR规格书详情
Description
These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.
• Ultra Low On-Resistance
• Dual N-Channel MOSFET
• Surface Mount
• Available in Tape & Reel
• Low Gate Charge
产品属性
- 型号:
IRF5852TR
- 功能描述:
MOSFET 2N-CH 20V 2.7A 6-TSOP
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
HEXFET®
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TSOP-6 |
25000 |
全新原装现货,假一赔十 |
询价 | ||
SOT-163 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IR |
22+ |
6-TSOP |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
IR |
0538+ |
TSOP-6 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Infineon Technologies |
23+ |
6TSOP |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
2022 |
TSOP-6 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
03+ |
TSOP-6 |
50 |
询价 | |||
IR |
23+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2008++ |
SOT-163SOT-23-6 |
27200 |
新进库存/原装 |
询价 |