Single channel high reliability power MOSFETs

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Infineon

英飞凌

Avalanche Energy Ratings

文件：118.55 Kbytes 页数：7 Pages

IRF

POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known

文件：116.42 Kbytes 页数：7 Pages

IRF

IR
SMD-1

IR

国际整流器

上传：深圳市毅创腾电子科技有限公司

IR
SMD-0.5

IR

国际整流器

上传：深圳市毅创腾电子科技有限公司