200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 3.3A, 200V, RDS(on)= 1.5Ω@VGS= 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switch

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FAIRCHILD

仙童半导体

200V N-Channel MOSFET

General Description\nThese N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. • 3.3A, 200V, RDS(on)= 1.5Ω@VGS= 10 V\n• Low gate charge ( typical 7.2 nC)\n• Low Crss ( typical 6.8 pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability;

ONSEMI

安森美半导体

Surface mount

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件：248.98 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：237.79 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司