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IRF610S

Surface mount

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

文件:182.71 Kbytes 页数:8 Pages

VishayVishay Siliconix

威世威世科技公司

IRF610S

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件:248.98 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF610S

HEXFET Power MOSFET

DESCRIPTION Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It

文件:178.74 Kbytes 页数:6 Pages

IRF

IRF610S_V01

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

文件:248.98 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF610SPBF

HEXFET짰 Power MOSFET

文件:1.87143 Mbytes 页数:9 Pages

IRF

IRF610SPBF

Power MOSFET

文件:237.79 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF610STRLPBFA

Power MOSFET

文件:237.79 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF610STRRPBFA

Power MOSFET

文件:237.79 Kbytes 页数:10 Pages

VishayVishay Siliconix

威世威世科技公司

IRF610S

Power MOSFET

Surface mount\nAvailable in tape and reel\nDynamic dV/dt rating;

Vishay

威世

IRF610S

HEXFET Power MOSFET

Infineon

英飞凌

详细参数

  • 型号:

    IRF610S

  • 功能描述:

    MOSFET N-Chan 200V 3.3 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
17+
D2-PAK
31518
原装正品 可含税交易
询价
IR
1415+
TO-263
28500
全新原装正品,优势热卖
询价
IR
24+
D2-Pak
8866
询价
IR
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
24+
TO-263
90000
一级代理商进口原装现货、价格合理
询价
恩XP
23+
SOT-23
69820
终端可以免费供样,支持BOM配单!
询价
VISHAY/威世
2447
TO-263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
VISHAY
25+
TO-263
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
询价
VISHAY/威世
21+
TO-263
10000
原装现货假一罚十
询价
更多IRF610S供应商 更新时间2025-12-5 10:02:00