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IRF611

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:113.15 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF611

N-Channel Power MOSFETs 3.5 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:113.15 Kbytes 页数:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF611

N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:148.52 Kbytes 页数:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF611

isc N-Channel MOSFET Transistor

文件:45.1 Kbytes 页数:2 Pages

ISC

无锡固电

IRF611

SEMICONDUCTORS

文件:2.43533 Mbytes 页数:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF611

N-Channel Power Mosfets

文件:344.15 Kbytes 页数:5 Pages

ARTSCHIP

IRF611

N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.5A.

GESS

IRF611

Trans MOSFET N-CH 150V 2.5A 3-Pin(3+Tab) TO-220AB

NJS

IRF611-N

N-Channel Power MOSFETs, 3.5A, 150-200V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. ● LOW RDS(on) ● VQS Rated at ± 20 V ● Silicon G

文件:148.52 Kbytes 页数:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

技术参数

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    20000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    150V

  • Maximum Continuous Drain Current:

    2.5A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

供应商型号品牌批号封装库存备注价格
IR
05+
原厂原装
5938
只做全新原装真实现货供应
询价
HARRIS
23+
DIP16
5000
原装正品,假一罚十
询价
SAM
23+
NA
3500
全新原装假一赔十
询价
SEC
23+
TO-220
50000
全新原装正品现货,支持订货
询价
SEC
21+
TO-220
10000
原装现货假一罚十
询价
SAM
25+
QFP
3200
全新原装、诚信经营、公司现货销售
询价
SMG
23+
TO-220
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
HAR
02+
TOP-3P
45
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
HAR
23+
TOP-3P
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
更多IRF611供应商 更新时间2025-10-7 10:31:00