HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device de

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Single channel high reliability power MOSFETs

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Infineon

英飞凌

HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device de

文件：120.82 Kbytes 页数：7 Pages

IRF

Avalanche Energy Ratings

文件：120.82 Kbytes 页数：7 Pages

IRF

POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device de

文件：118.99 Kbytes 页数：7 Pages

IRF