POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)

Product Summary Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSF

文件：103.22 Kbytes 页数：7 Pages

IRF

HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) 55V, N-CHANNEL

Product Summary\nFifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs

Infineon

英飞凌

IR
TO-220

IR

国际整流器

上传：深圳市美思瑞电子科技有限公司

IR
TO-220

IR

国际整流器

上传：深圳市勤思达科技有限公司

IR
TO-263

IR

国际整流器

上传：深圳市勤思达科技有限公司