Single channel high reliability power MOSFETs

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Infineon

英飞凌

Avalanche Energy Ratings

文件：119.18 Kbytes 页数：7 Pages

IRF

POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device de

文件：117.28 Kbytes 页数：7 Pages

IRF

TO-220

IR

国际整流器

上传：深圳市美思瑞电子科技有限公司

TO-220

IR

国际整流器

上传：深圳市勤思达科技有限公司