Power MOSFET(Vdss = -20 V)

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Thi

文件：172.54 Kbytes 页数：14 Pages

IRF

Power MOSFET(Vdss = -20 V)

Infineon

英飞凌

HEXFET짰 Power MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

文件：181.6 Kbytes 页数：14 Pages

IRF

Dual N and P Channel MOSFET

Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. Th

文件：255.64 Kbytes 页数：14 Pages

IRF

丝印：NPEH；Package：SOT23-6；N and P-Channel Enhancement Mode Power MOSFET

Application = DC-DC Converters. m Load Switch. ® Power Management.

文件：6.56577 Mbytes 页数：8 Pages

TECHPUBLIC

台舟电子

N- and P-Channel V (D-S) MOSFET

文件：2.22638 Mbytes 页数：10 Pages

VBSEMI

微碧半导体