Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：185.16 Kbytes 页数：10 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)

Infineon

英飞凌

Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.9 Kbytes 页数：8 Pages

IRF

isc N-Channel MOSFET Transistor

文件：294.54 Kbytes 页数：2 Pages

ISC

无锡固电

Low-profile through-hole (IRF520NL)

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the high est power capability and the lowest pos sible on-resistance in any existing surfa ce mount package. The D2Pak is suitable for high current applications because of its low in

文件：1.09122 Mbytes 页数：10 Pages

KERSEMI