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IRF530L

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530N

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.TheIRF530NissuppliedintheSOT78(TO220AB)conventionalleadedpackage. 1.’Trench’technology 2.Lowon-stateresistance 3.Fastswitching 4.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

IRF530N

PowerMOSFET(Vdss=100V,Rds(on)=90mohm,Id=17A)

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF530N

22A,100V,0.064Ohm,N-ChannelPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.064Ω,VGS=10V •SimulationModels -TemperatureCompensatedPSPICE™andSABER©ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.intersil.com •PeakCurrentvsPulseWidthCurve •UISRatingCurve

Intersil

Intersil Corporation

IRF530N

N-ChannelMOSFETTransistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.09Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperati

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF530NL

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF530NL

UltraLowOn-Resistance

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF530NL

IscN-ChannelMOSFETTransistor

•FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF530NLPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF530NLPBF

AdvancedProcessTechnology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

详细参数

  • 型号:

    IRF530H

  • 制造商:

    HAR

  • 功能描述:

    IRF530 HARRIS NOTES

供应商型号品牌批号封装库存备注价格
IR
22+
2004
6000
终端可免费供样,支持BOM配单
询价
IR
23+
2004
8000
只做原装现货
询价
IR
23+
2004
7000
询价
IR
23+
TO-262
35890
询价
IR
23+
TO-263
4569
专业优势供应
询价
IR
2018+
TO262
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
VISHAY
1503+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO263
50000
全新原装正品现货,支持订货
询价
IR
21+
TO263
10000
原装现货假一罚十
询价
更多IRF530H供应商 更新时间2025-5-29 14:00:00