N-Channel Power MOSFETs Avalanche Energy Rated

文件：390.01 Kbytes 页数：5 Pages

HARRIS

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES •Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in

文件：177.08 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世科技

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件：180.1 Kbytes 页数：6 Pages

IRF

HEXFET Power MOSFET

文件：171.61 Kbytes 页数：8 Pages

IRF