Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10µA (Max.) @ VDS= 100V Lower RDS(ON) : 0.032Ω(Typ.)

文件：261.72 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10µA (Max.) @ VDS= 100V Lower RDS(ON) : 0.032Ω(Typ.)

文件：261.72 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：280.1 Kbytes 页数：2 Pages

ISC

无锡固电